bc 817, bc 818 1 sep-27-1999 npn silicon af transistors ? for general af applications ? high collector current ? high current gain ? low collector-emitter saturation voltage ? complementary types: bc 807, bc 808 (pnp) 1 2 3 vps05161 type marking pin configuration package bc 817-16 bc 817-25 bc 817-40 bc 818-16 bc 818-25 bc 818-40 6as 6bs 6cs 6es 6fs 6gs 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 maximum ratings parameter symbol bc 817 bc 818 unit collector-emitter voltage v ceo 45 25 v collector-base voltage v cbo 50 30 emitter-base voltage v ebo 5 5 dc collector current i c 500 ma peak collector current i cm 1 a base current ma 100 i b peak base current i bm 200 total power dissipation , t s = 79 c p tot 330 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 285 k/w junction - soldering point r thjs 215 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bc 817, bc 818 2 sep-27-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 bc 817 bc 818 v (br)ceo 45 25 - - - - v collector-base breakdown voltage i c = 10 a, i b = 0 bc 817 bc 818 v (br)cbo 50 30 - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector cutoff current v cb = 25 v, i e = 0 i cbo - - 100 na collector cutoff current v cb = 25 v, i e = 0 , t a = 150 c i cbo - - 50 a emitter cutoff current v eb = 4 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 100 ma, v ce = 1 v h fe -grp. 16 h fe -grp. 25 h fe -grp. 40 h fe 100 160 250 160 250 350 250 400 630 - dc current gain 1) i c = 300 ma, v ce = 1 v h fe -grp. 16 h fe -grp. 25 h fe -grp. 40 h fe 60 100 170 - - - - - - collector-emitter saturation voltage1) i c = 500 ma, i b = 50 ma v cesat - - 0.7 v base-emitter saturation voltage 1) i c = 500 ma, i b = 50 ma v besat - - 1.2 1) pulse test: t 300 s, d = 2%
bc 817, bc 818 3 sep-27-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 50 ma, v ce = 5 v, f = 100 mhz f t - 170 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 6 - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 60 -
bc 817, bc 818 4 sep-27-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 200 400 0 50 100 150 bc 817/818 ehp00217 mw ?c 300 100 t as t p tot t t ; as transition frequency f t = f ( i c ) v ce = 5v 10 ehp00218 bc 817/818 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00220 bc 817/818 -6 0 10 5 d = 5 10 1 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tot max tot p dc p p t t p = d t t p t collector cutoff current i cbo = f ( t a ) v cbo = 25v 0 10 ehp00221 bc 817/818 a t 150 0 5 10 cbo na 50 100 1 10 2 10 4 10 ? c typ max 10 3
bc 817, bc 818 5 sep-27-1999 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 10 ehp00223 bc 817/818 cesat v 0.4 v 0.8 -1 10 0 10 1 3 10 5 5 c ma 5 2 10 0.2 0.6 ? c -50 25 ? c 150 ? c base-emitter saturation voltage i c = f ( v besat ), h fe = 10 0 10 ehp00222 bc 817/818 besat v 2.0 v 4.0 -1 10 0 10 1 3 10 5 5 c ma 5 2 10 1.0 3.0 ? c -50 25 ? c ? c 150 dc current gain h fe = f(ic) v ce = 1v 10 ehp00224 bc 817/818 -1 3 10 ma 0 10 3 10 5 5 10 0 10 1 10 1 c fe h 2 10 2 10 ? c 100 5 25 ? c -50 ? c
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